smd type transistors 1 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 www.kexin.com.cn features for general af applications. high collector current. high current gain. low collector-emitter saturation voltage. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 30 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 5v collector current (dc) i c 500 ma peak collector current i cm 1a base current i b 100 ma power dissipation p d 310 mw storage temperature t stg -65to+150 junction temperature t j 150 npn silicon af transistors kc818a (BC818A) electrical characteristics ta = 25 symbol testconditons min typ max unit collector-to-base breakdown voltage v cbo i c =10 a, i e =0 30 v collector-to-emitter breakdown voltage v ceo i c =10ma,i b =0 25 v v ebo i e =10 a, i c =0 5v v cb =25v,i e = 0 100 na v cb =25v,i e =0,t a = 150 50 a i ebo v eb =4v,i c = 0 100 na kc818a-16 100 160 250 kc818a-25 160 250 400 kc818a-40 250 350 630 v ce(sat) i c = 500 ma, i b =50ma 0.7 v v be(sat) i c = 500 ma, i b =50ma 1.2 v c cb v cb =10v,f=1mhz 6 pf ceb v eb = 0.5 v, f = 1 mhz 60 pf f t i c =50ma,v ce = 5 v, f = 100 mhz 170 mhz * pulsed: pw 350 s, duty cycle 2% base to emitter voltage * collector cutoff current collector-base capacitance transition frequency emitter-base capacitance collector saturation voltage * i c = 100 ma, v ce =-1v parameter emitter cutoff current dc current gain * emitter-to-base breakdown voltage h fe i cbo marking no. kc818a-16 kc818a-25 kc818a-40 marking 6e 6f 6g
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